00 ???`? ? ? dimension:mm ????g?R ollector-mitter oltage ` ? g R ate-mitter oltage ollector urrent p ? ollector ower issipation unction emperature ange torage emperature ange ~ F R(erminal to ase ,inute) solation oltage , odule ase to eatsink . ounting orque usbar to ain erminal . ? (kgf?cm) . . . ollector-mitter ut-ff urrent = 600v, = 0v . ` ? ate-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 200a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 200ma . . nput apacitance = 10v, = 0v,= 1mh 10,000 N r g ise ime . . `??rg urn-on ime . . r g all ime . . ???rg witching ime `???rg urn-off ime = 300v = 1.5 = 3.6 = 15v . . ? ?`?`??`? orward urrent . . . R eak orward oltage = 200a, = 0v . . r g everse ecovery ime = 200a, = -10v i/t= 400a/s . . ? . . . . hermal mpedance iode th(j-c) junction to case tcy?? . 7(g2) 6(e2) (c1) 3 (e2) 2 (c2e1) 1 2-?6.5 23.0 23.0 17.0 4 3-m5 16.0 0.25 14.0 48.0 12.0 12.0 12.0 11.0 11.0 80 94.0 1 2 3 7 6 30 +1.0 - 0.5 14 9 14 9 14 4-fasten tab #110 t=0.5 7.5 21.2 7 label www.datasheet.co.kr datasheet pdf - http://www..net/
00 ???`? ? 0.1 0.2 0.5 1 2 5 10 20 50 100 200 100 300 1000 3000 10000 30000 100000 collector to emitter voltage v ce (v) capacitance c (pf) fig.6 - capacitance vs. collector to emitter voltage (typical) cies coes cres v ge =0v f=1mh z t c =25c 012345 0 50 100 150 200 250 300 350 400 collector to emitter voltage v ce (v) collector current i c (a) fig.1 - output characteristics (typical) t c =25c 11v 10v v ge =20v 9v 8v 12v 15v 012345 0 50 100 150 200 250 300 350 400 collector to emitter voltage v ce (v) collector current i c (a) fig.2 - output characteristics (typical) t c =125c 11v 10v v ge =20v 9v 8v 12v 15v 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3 - collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25c i c =100a 400a 200a 0 4 8 121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.4 - collector to emitter on voltage vs. gate to emitter voltage (typical) i c =100a 400a t c =125c 200a 0 200 400 600 800 0 50 100 150 200 250 300 350 400 total gate charge qg (nc) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) fig.5 - gate charge vs. collector to emitter voltage (typical) 0 2 4 6 8 10 12 14 16 v ce =300v 200v 100v r l =1.5 ( t c =25c www.datasheet.co.kr datasheet pdf - http://www..net/
00 ???`? ? 1 3 10 30 1 3 10 30 100 300 series gate impedance r g ( ( ) switching loss e sw (mj/pulse) fig.12 - series gate impedance vs. switching loss e off e on v cc =300v i c =200a v ge =15v t c =125c inductive load e rr 0 50 100 150 200 250 300 0 0.2 0.4 0.6 0.8 1 collector current i c (a) switching time t (s) fig.7 - collector current vs. switching time (typical) t off t f t r(v ce ) t on v cc =300v r g =3.6 ( v ge =15v t c =25c resistive load 1 3 10 30 100 0.02 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g ( ( ) switching time t (s) fig.8 - series gate impedance vs. switching time (typical) v cc =300v i c =200a v ge =15v t c =25c resistive load tf tr (v ce ) ton toff 1 3 10 30 100 0.02 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g ( ( ) switching time t (s) fig.10 - series gate impedance vs. switching time v cc =300v i c =200a v ge =15v t c =125c inductive load tf tr (i c ) ton toff 0 50 100 150 200 250 300 0 4 8 12 16 20 collector current i c (a) switching loss e sw (mj/pulse) fig.11 - collector current vs. switching loss e off e on v cc =300v r g =3.6 ( v ge =15v t c =125c inductive load e rr 0 50 100 150 200 250 300 0.001 0.01 0.1 1 10 collector current i c (a) switching time t (s) fig.9 - collector current vs. switching time t off t f t r(ic) t on v cc =300v r g =3.6 ( v ge =15v t c =125c inductive load www.datasheet.co.kr datasheet pdf - http://www..net/
00 ???`? ? 01234 0 50 100 150 200 250 300 350 400 forward voltage v f (v) forward current i f (a) fig.13 - forward characteristics of free wheeling diode (typical) t c =25c t c =125c 0 200 400 600 800 1000 1200 10 20 50 100 200 500 1000 -di/dt (a/s) peak reverse recovery current i rrm (a) reverse recovery time trr (ns) fig.14 - reverse recovery characteristics (typical) i rrm trr i f =200a t c =25c t c =125c 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 3x10 -4 1x10 -3 3x10 -3 1x10 -2 3x10 -2 1x10 -1 3x10 -1 1 3 time t (s) transient thermal impedance rth (j-c) (c/w) fig.16 - transient thermal impedance t c =25c 1 shot pulse frd igbt 0 200 400 600 800 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 collector to emitter voltage v ce (v) collector current i c (a) fig.15 - reverse bias safe operating area r g =3.6 ( , v ge =15v, t c < 125c www.datasheet.co.kr datasheet pdf - http://www..net/
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